Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-10-20
著者
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YASUAMI Sigeru
ULSI Research Center, Toshiba Corporation
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FUKUTA Katsuyoshi
Toshiba Research and Development Center, Toshiba Corporation
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YASUAMI Shigeru
Toshiba Corporation
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Yasuami S
Toshiba Corp. Kawasaki
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FUKUTA Katsuyoshi
Research and Development Center, Toshiba Corporation
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NAKANISI Takatosi
Toshiba R & D Center, Toshiba Corporation
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Yasuami Sigeru
Ulsi Research Center Toshiba Corporation
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Nakanisi T
Research And Development Center Toshiba Corporation
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Fukuta K
Research And Development Center Toshiba Corporation
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Fukuta Katsuyoshi
Toshiba R & D Center Toshiba Corporation
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- Visualization of Defects in GaAs by Oxidation in Water
- Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers
- Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour Phase
- Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs
- An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact