Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour Phase
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- 社団法人応用物理学会の論文
- 1973-08-05
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関連論文
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour Phase
- Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs
- An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact