An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1973-11-05

著者

• NAKANISI Takatosi

  Toshiba R & D Center, Toshiba Corporation

• Nakanisi Takatosi

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

関連論文

• Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
• Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour Phase
• Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs
• An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact

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