Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs

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概要

• 論文の詳細を見る

• Undoped and doped epitaxial layers with carrier concentrations from 10^<15> to 10^<17> cm^<-3> were grown by using the AsCl_3/Ga/GaAs/H_2 transport system. Electrical and photoluminescence measurements showed that Si, Ge and Sn were incorporated amphoterically from the dopant source GaAs into epitaxial layers. Evidence is given indicating that the major electrically active impurity in undoped layer is Si. The growth temperature dependence of the impurity incorporation is well described by the Arrhenius relation. The activation energies Ei's vary systematically with the impurity species. They decrease in the order of Si>Ge>Sn. Also Ei's vary with the substrate orientation, decreasing in the order of (100)>(111)_B>(110). These dependences can be described satisfactorily in terms of the kinetic reactions between the impurity and the growing surface.

• 社団法人応用物理学会の論文
• 1974-03-05

著者

• NAKANISI Takatosi

  Toshiba R & D Center, Toshiba Corporation

• KASIWAGI Masahiro

  Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.

• Kasiwagi Masahiro

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

関連論文

• Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
• Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour Phase
• Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs
• An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact

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