Modulation-Doped In_<0.5>Al_<0.5>P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices

概要

論文の詳細を見る
In_<0.5>Al_<0.5>P/GaAs modulation-doped field-effect transistors (MODFETs) have been fabricated to study the applicability of In_<0.5>(Ga_<1-x>Al_x)_<0.5>P/GaAs heterostructures to electronic devices. A DC transconductance of 250 ms/mm and a noise figure of 1.7 dB with associated gain of 10 dB at 12 GHz were obtained for a MODFET with a 0.25μm-long and 200μm-wide gate. Improvements in the performance are expected by A1-composition optimization for the InGaAlP. These results show the promising potential of In_<0.5>(Ga_<1-x>Al_x)_<0.5>P/GaAs MODFETs as high-frequency and high-speed devices .
社団法人応用物理学会の論文
1988-05-20