Properties of TiN Films on Heated Substrate Below 550℃ by 50 Hz Plasma-Enhanced Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-03-15

著者

• Yoshino Masaki

  Hokkaido Polytechnic College

• DATE Hiroyuki

  College of Medical Technology, Hokkaido University

• TAGASHIRA Hiroaki

  Muroran Institute of Technology

• Date Hiroyuki

  College Of Medical Technology Hokkaido University

• Date Hiroyuki

  College Of Medical Technology Hokkaido Univ.

• Tagashira H

  Muroran Inst. Technol.

• Tagashira Hiroaki

  Department Of Electrical Engineering Hokkaido University

• Shimozuma M

  College Of Medical Technology Hokkaido University

• Shimozuma Mitsuo

  College Of Medical Technology Hokkaido University

• RODRIGO Adolfo

  Comision Nacional de Energia Atomica

関連論文

• Ionization Coefficient in Gases under Nonuniform Electric Fields
• Modeling of the electron kinetics in proportional counters
• Drift Velocities of Electron Swarms in Methane : A Multi-Term Boltzmann Equation Analysis
• Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO_2 Films
• Numerical Model of Compressed Breast for the Japanese Women : For the Dose Estimation of Mmmography
• Influence of H_2 Additive on Hg/Ar Gas Mixture Discharges : Boltzmann Equation Analyses
• Boltzmann Equation Analysis of Electron Swarm Development in Model Gases with Power-Law Elastic Scattering
• Properties of TiN Films on Heated Substrate Below 550℃ by 50 Hz Plasma-Enhanced Chemical Vapor Deposition
• Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition

スポンサーリンク