Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Maniruzzaman Md.

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn

関連論文

• Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V,AWAD2006)
• Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V)
• Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO_2
• Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2 (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2
• Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2
• Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
• Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2

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