ADACHI Akira | Research Development Division, Nissin Electric Co. Ltd.
スポンサーリンク
概要
関連著者
-
Adachi Akira
R&d Division Nissin Electric Co. Ltd.
-
Sano Naokatsu
Faculty Of Science Kwansei-gakuin University
-
Sano Naokatsu
Faculty Of Engineering Science Osaka University
-
Sano Naokatsu
Department Of Physics School Of Science Kwansei Gakuin University
-
Sano Naokatsu
School Of Science Kwansei Gakuin University
-
SANO Naoki
Sony Research Center
-
Adachi A
Advanced Materials Laboratory Japan Chemical Innovation Institute
-
HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
-
OKAMOTO Yasunori
Research and Headquarters, Kubota Corporation
-
HIYAMIZU Satoshi
Faculty of Engineering Science, Osaka University
-
SHIMOMURA Satoshi
Faculty of Engineering Science, Osaka University
-
ADACHI Akira
Research Development Division, Nissin Electric Co. Ltd.
-
Shimomura S
Graduate School Of Science And Engineering Ehime University
-
Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
-
Hiyamizu S
Osaka Univ. Osaka Jpn
-
Okamoto Yasunori
Research And Headquarters Kubota Corporation
-
Wakejima Akio
Faculty Of Engineering Science Osaka University
-
SAEKI Tatsuya
Faculty of Engineering Science, Osaka University
-
MOTOKAWA Takeharu
Faculty of Engineering Science, Osaka University
-
KITADA Takahiro
Faculty of Engineering Science, Osaka University
-
MURASE Kazuo
Faculty of Science, Osaka University
-
Murase Kazuo
Faculty Of Science Osaka University
-
KITADA Takahiro
Osaka University
-
Murase K
Nagoya Inst. Technol. Nagoya Jpn
-
Saeki Tatsuya
Graduate School Of Engineering Science Osaka University
-
MURASE Kouki
Department of Electrical Engineering, Osaka University
-
Murase Kouki
Department Of Electrical Engineering Osaka University
-
Motokawa Takeharu
Faculty Of Engineering Science Osaka University
-
Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
著作論文
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy