New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition
スポンサーリンク
概要
- 論文の詳細を見る
For the purpose of substituting transparent conducting Al-doped ZnO (AZO) thin films for indium–tin-oxide (ITO) transparent electrodes, investigations have been conducted to improve resistivity distribution using magnetron sputtering techniques. New techniques, such as adding an rf (13.56 MHz) component to dc magnetron sputtering depositions with or without the introduction of hydrogen gas into the deposition chamber, resulted in a considerable improvement of resistivity distribution. A resistivity as low as $5 \times 10^{-4}$ $\Omega$ cm and a more uniform resistivity distribution on the substrate surface were obtained in AZO films prepared with a thickness of 200 nm on glass substrates at a temperature of 200 °C.
- Japan Society of Applied Physicsの論文
- 2006-04-25
著者
-
Minami Tadatsugu
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
-
Miyata Toshihiro
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
-
Ohtani Yuusuke
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
-
Mochizuki Yuu
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
関連論文
- High-Luminance EL Devices Using Y_2GeO_5 Phosphor Thin Films Prepared by Magnetron Sputtering(Special Issue on Electronic Displays)
- Mn-Activated Y_2O_3-GeO_2 Phosphors for Thin-Film Electroluminescent Devices : Semiconductors
- High-Efficiency Oxide Heterojunction Solar Cells Using Cu_2O Sheets
- Stability of Postannealed Silicon Dioxide Electret Thin Films Prepared by Magnetron Sputtering
- High-Luminance Thin-Film Electroluminescent Devices Using ((Y_2O_3)_-(GeO_2)_):Mn Phosphors : Optics and Quantum Electronics
- High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y_2O_3 Phosphor Activated with Mn : Optics and Quantum Electronics
- Effect of Driving Frequency on the EL Characteristics of Thick Ceramic Insulating Type TFEL Devices Using Y_2O_3-Based Phosphor Emitting Layer(Electronic Displays)
- High-Luminance Multicolor-Emitting Thin-Film Electroluminescent Devices Using(Y_2 O_3-Ga_2 O_3):Mn Phosphors
- High-Efficiency Oxide Solar Cells with ZnO/Cu_2O Heterojunction Fabricated on Thermally Oxidized Cu_2O Sheets
- High-Luminance EL Devices Using Zn_2Si_Ge_XO_4 : Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets(Electronic Displays)
- High-Efficiency Cu₂O-Based Heterojunction Solar Cells Fabricated Using a Ga₂O₃ Thin Film as N-Type Layer
- New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition
- High-Efficiency Cu_2O-Based Heterojunction Solar Cells Fabricated Using a Ga_2O_3 Thin Film as N-Type Layer