High-Luminance EL Devices Using Zn_2Si_<1-X>Ge_XO_4 : Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets(<Special Section>Electronic Displays)
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概要
- 論文の詳細を見る
A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn_2Si_<1-X>Ge_XO_4 : Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m^2 were obtained in Zn_2Si_<0.6>Ge_<0.4>O_4 : Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.
- 社団法人電子情報通信学会の論文
- 2005-11-01
著者
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Minami Tadatsugu
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
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Miyata Toshihiro
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
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MOCHIZUKI Yu
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
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Mochizuki Yu
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
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