High-Luminance Thin-Film Electroluminescent Devices Using ((Y_2O_3)_<0.6>-(GeO_2)_<0.4>):Mn Phosphors : Optics and Quantum Electronics

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-05-15

著者

• Kobayashi Y

  Saitama Univ. Saitama‐shi Jpn

• Suzuki S

  Nikon Corp. Tokyo Jpn

• Suzuki Setsuo

  Energy And Mechanical Research Laboratories Research And Development Center Toshiba Corporation

• Suzuki S

  Chiba Institute Of Technology

• Suzuki Suguru

  Department Of Materials Science And Engineering Nagoya Institute Of Technology

• MINAMI Tadatsugu

  Optoelectronic Device System R&D Center, Kanazawa Institute of Technology

• KOBAYASHI Youhei

  Optoelectronic Device System R&D Center, Kanazawa Institute of Technology

• MIYATA Toshihiro

  Optoelectronic Device System R&D Center, Kanazawa Institute of Technology

• Suzuki Susumu

  Chiba Institute Of Technology

• SUZUKI Shingo

  Optoelectronic Device System R&D Center, Kanazawa Institute of Technology

• Suzuki S

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Minami T

  Optoelectronic Device System R&d Center Kanazawa Institute Of Technology

• Minami Tadatsugu

  Optoelectronic Device System R&d Center Kanazawa Institute Of Technology

• Miyata Toshihiro

  Optoelectronic Device System R&d Center Kanazawa Institute Of Technology

• Suzuki Setsu

  School Of Science And Engineering Waseda University

• Kobayashi Youhei

  Optoelectronic Device System R&D Center, Kanazawa Institute of Technology

関連論文

• Temperature Dependence of the Ideality Factor of Ba_K_xBiO_3/Nb-doped SrTiO_3 All-Oxide-Type Schottky Junctions
• Effect of the Field Dependent Permittivity and Interfacial Layer on Ba_K_xBi0_3/Nb-Doped SrTi0_3 Schottky Junctions
• Space-Group Determination of a New Superconductor (Nd_Sr_Ce_)_2CuO_ Using Convergent-Beam Electron Diffraction
• Superconductivity in the Nd-Sr-Ce-Cu-O System : Electrical Properties of Condensed Matter
• High-Luminance EL Devices Using Y_2GeO_5 Phosphor Thin Films Prepared by Magnetron Sputtering(Special Issue on Electronic Displays)
• Mn-Activated Y_2O_3-GeO_2 Phosphors for Thin-Film Electroluminescent Devices : Semiconductors
• Study of the Tunneling Characteristics of Ba_K_xBiO_3 Superconducting Thin Films Based on the Gap-Energy Distribution Model
• Characterization of Ba_K_xBiO_3 Superconducting Thin Films for Three-Terminal Devices
• Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba_K_xBiO_3/Niobium-Doped SrTiO_3 Structure
• Junction Characteristics of an Au/Ba_K_xBiO_3/Niobium-Doped SrTiO_3 Structure
• High-Efficiency Oxide Heterojunction Solar Cells Using Cu_2O Sheets
• Property and Structure of YBa_2Cu_3O_-Nb_2O_5 Composite
• Stability of Postannealed Silicon Dioxide Electret Thin Films Prepared by Magnetron Sputtering
• Observation of VUV Emission Spectra from DC Positive Corona Discharge
• A Novel Generation Method of Dielectric Barrier Discharge and Ozone Production Using a Piezoelectric Transformer
• Luminescence from Fluorescent Material Excited by Piezoelectric Transformer
• Luminous Phenomenon of Silent Discharge Using a Piezoelectric Transformer
• High-Luminance Thin-Film Electroluminescent Devices Using ((Y_2O_3)_-(GeO_2)_):Mn Phosphors : Optics and Quantum Electronics
• High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y_2O_3 Phosphor Activated with Mn : Optics and Quantum Electronics
• Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor Structure
• Efficient MIS Electric Field Effect on Diamond Thin Film Transistors
• Fermi Level Pinning in Metal-Insulator-Diamond Structures
• Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing BaTiO_3 Insulator Film
• Characteristics of a Large-Bore Copper Vapor Laser with Gas-Cooling Plates
• Lower-Submicron Patterning Process for BiSrCaCuO High-T_c Superconducting Thin Films
• An Area Selective and Anisotropic Etching of Si by Synchrotron Radiation Excitation : Effects of Introducing O_2 Molecules
• Improvement in the Output Characteristics of a Large-Bore Copper Vapor Laser by Hydrogen
• Glow Auxiliary Electrical Discharge for CW High-Power CO_2 Lasers
• Interfacial Interaction between Nematic Liquid Crystal and Polymer in the Composite Film Consisting of Nematic Liquid Crystal and Connected Polymer Microspheres
• Ion Bombardment Enhanced Etching for Bi-Ca-Sr-Cu-O High-T_c Superconducting Thin Films : Etching and Deposition Technology
• Ion Bombardment Enhanced Etching for Bi-Ca-Sr-Cu-O High-T_c Superconducting Thin Films
• Property and Structure of YBa_2Cu_3O_x-Ag Composites Prepared from Nitrate Solutions
• Property Control for High-Quality Ba_K_xBiO_3 Epitaxial Thin Films Prepared by High-Pressure Reactive rf-Magnetron Sputtering
• Effect of Driving Frequency on the EL Characteristics of Thick Ceramic Insulating Type TFEL Devices Using Y_2O_3-Based Phosphor Emitting Layer(Electronic Displays)
• High-Luminance Multicolor-Emitting Thin-Film Electroluminescent Devices Using(Y_2 O_3-Ga_2 O_3):Mn Phosphors
• Photochemical Etching of GaAs using Synchrotron Radiation
• Motion Estimation and Compensation Hardware Architecture for a Scene-Adaptive Algorithm on a Single-Chip MPEG-2 Video Encoder
• Three-Layer Cooperative Architecture for MPEG-2 Video Encoder LSI (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• MEAN WAITING TIMES OF THE ALTERNATING TRAFFIC WITH STARTING DELAYS
• Density Accumulation of a Magnetized Current-Carrying Plasma Caused by a Metal Disk
• Effect of Ionization on the Potential Distribance of a Current-Carrying Magnetized Plasma a Current-Carrying Magnetized Plasma Caused by a Metal Plate
• Negative Charge Density of a Magnetized Presheath Plasma with Two-Dimensional Ion Flux
• Structural Studies on the ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy III
• Structural Studies on ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy I
• Design of Temperature Independent Add/Drop Filter Using Vertical Coupled ARROW Filter
• Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
• Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer
• Radial Profiles of Electron Density and Current Components at Cathode Surface in LaB_6 Hollow Cathode Arc
• Electroluminescent Devices with Ga_2O_3 : Mn Thin-Film Emitting Layer Prepared by Sol-Gel Process
• Characterization of a Natural Barrier in an Au/Ba_K_XBiO_3 Junction
• Fault Localization and Supervisory Channel Implementation for Optical Linear-Repeaters in SDH/SONET-Based Networks
• Fabrication of Thick Bi_Pb_Sr_2Ca_2Cu_3O_x Superconducting Tapes by an Extrusion Method Using Paraffin Wax
• Electrooptical Properties of Polymer Films Containing Nematic Liquid Crystal Microdroplets
• The Apparatus with a Microprocessor for the Photoluminescence Spectra Correction and Processing
• High-Efficiency Oxide Solar Cells with ZnO/Cu_2O Heterojunction Fabricated on Thermally Oxidized Cu_2O Sheets
• Silicon Epitaxy by Plasma Dissociation of Silane : C-3: CRYSTAL TECHNOLOGY
• High-Luminance EL Devices Using Zn_2Si_Ge_XO_4 : Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets(Electronic Displays)
• Studies of Diffusion Losses in Gaseous Media Using a Boundary Condition of the Third Kind
• High-Efficiency Cu₂O-Based Heterojunction Solar Cells Fabricated Using a Ga₂O₃ Thin Film as N-Type Layer
• Experiment and discussion on mobility of O_2^- in O_2
• Experiment and discussion on mobility of O_2^- in O_2
• New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition
• High-Efficiency Cu_2O-Based Heterojunction Solar Cells Fabricated Using a Ga_2O_3 Thin Film as N-Type Layer

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