Silicon Epitaxy by Plasma Dissociation of Silane : C-3: CRYSTAL TECHNOLOGY
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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ITOH Tadatsugu
School of Science and Engineering, Waseda University
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Suzuki Setsu
School Of Science And Engineering Waseda University
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Takai Hiroshi
School Of Science And Engineering Waseda University
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OKUDA Hidekazu
School of Science and Engineering, Waseda University
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Okuda Hidekazu
School Of Science And Engineering Waseda University
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
関連論文
- Temperature Dependence of the Ideality Factor of Ba_K_xBiO_3/Nb-doped SrTiO_3 All-Oxide-Type Schottky Junctions
- Effect of the Field Dependent Permittivity and Interfacial Layer on Ba_K_xBi0_3/Nb-Doped SrTi0_3 Schottky Junctions
- Space-Group Determination of a New Superconductor (Nd_Sr_Ce_)_2CuO_ Using Convergent-Beam Electron Diffraction
- Superconductivity in the Nd-Sr-Ce-Cu-O System : Electrical Properties of Condensed Matter
- Characterization of Ba_K_xBiO_3 Superconducting Thin Films for Three-Terminal Devices
- Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba_K_xBiO_3/Niobium-Doped SrTiO_3 Structure
- Junction Characteristics of an Au/Ba_K_xBiO_3/Niobium-Doped SrTiO_3 Structure
- Property and Structure of YBa_2Cu_3O_-Nb_2O_5 Composite
- Observation of VUV Emission Spectra from DC Positive Corona Discharge
- Luminescence from Fluorescent Material Excited by Piezoelectric Transformer
- Luminous Phenomenon of Silent Discharge Using a Piezoelectric Transformer
- High-Luminance Thin-Film Electroluminescent Devices Using ((Y_2O_3)_-(GeO_2)_):Mn Phosphors : Optics and Quantum Electronics
- High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y_2O_3 Phosphor Activated with Mn : Optics and Quantum Electronics
- Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor Structure
- Efficient MIS Electric Field Effect on Diamond Thin Film Transistors
- Fermi Level Pinning in Metal-Insulator-Diamond Structures
- Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing BaTiO_3 Insulator Film
- Characteristics of a Large-Bore Copper Vapor Laser with Gas-Cooling Plates
- Lower-Submicron Patterning Process for BiSrCaCuO High-T_c Superconducting Thin Films
- An Area Selective and Anisotropic Etching of Si by Synchrotron Radiation Excitation : Effects of Introducing O_2 Molecules
- Improvement in the Output Characteristics of a Large-Bore Copper Vapor Laser by Hydrogen
- Glow Auxiliary Electrical Discharge for CW High-Power CO_2 Lasers
- Interfacial Interaction between Nematic Liquid Crystal and Polymer in the Composite Film Consisting of Nematic Liquid Crystal and Connected Polymer Microspheres
- Ion Bombardment Enhanced Etching for Bi-Ca-Sr-Cu-O High-T_c Superconducting Thin Films : Etching and Deposition Technology
- Ion Bombardment Enhanced Etching for Bi-Ca-Sr-Cu-O High-T_c Superconducting Thin Films
- Property and Structure of YBa_2Cu_3O_x-Ag Composites Prepared from Nitrate Solutions
- Property Control for High-Quality Ba_K_xBiO_3 Epitaxial Thin Films Prepared by High-Pressure Reactive rf-Magnetron Sputtering
- Photochemical Etching of GaAs using Synchrotron Radiation
- Density Accumulation of a Magnetized Current-Carrying Plasma Caused by a Metal Disk
- Effect of Ionization on the Potential Distribance of a Current-Carrying Magnetized Plasma a Current-Carrying Magnetized Plasma Caused by a Metal Plate
- Negative Charge Density of a Magnetized Presheath Plasma with Two-Dimensional Ion Flux
- Structural Studies on the ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy III
- Structural Studies on ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy I
- Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
- Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer
- Anneal Behavior of Aluminum-Implanted Germanium
- Carrier Generation in Germanium Implanted with Aluminum at Room Temperature
- Characterization of a Natural Barrier in an Au/Ba_K_XBiO_3 Junction
- Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition
- Antimony Concentratuon in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
- Fabrication of Thick Bi_Pb_Sr_2Ca_2Cu_3O_x Superconducting Tapes by an Extrusion Method Using Paraffin Wax
- Electrooptical Properties of Polymer Films Containing Nematic Liquid Crystal Microdroplets
- Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
- The Apparatus with a Microprocessor for the Photoluminescence Spectra Correction and Processing
- Silicon Epitaxy by Plasma Dissociation of Silane : C-3: CRYSTAL TECHNOLOGY
- Characteristics of Si Films Grown on Ion Processed Sapphire Substrates by Plasma Dissociation of Silane
- Damage in the Surface Region of Silicon Produced by Sputter-Etching
- Annealing Behavior of Boron and Oxygen Implanted Silicon
- Growth of GaAs by LPE on Oxygen-Implanted GaAs Substrate
- Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation
- Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas Flow
- Electrical Properties of GaAs-Films Grown by LPE on Oxygen-Implanted GaAs Substrates
- Boron Implantation into Si Using B_2O_3 and B Mixture for Ion Source Material