Electrical Properties of GaAs-Films Grown by LPE on Oxygen-Implanted GaAs Substrates
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概要
- 論文の詳細を見る
When oxygen implanted n-GaAs substrate is annealed in hydrogen gas flow without protection film, excess oxygen atoms diffuse out of the surface through arsenic vacancies because of capless annealing. Whereas implanted oxygen atoms do not diffuse inwards by annealing. An n-GaAs film grown on oxygen implanted n-GaAs substrate is isolated electrically from the substrate. The film can be applicable to microwave devices.
- 社団法人応用物理学会の論文
- 1977-10-05
著者
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Takeuchi Masami
School Of Pharmacy Hokuriku University
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
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