Characteristics of Si Films Grown on Ion Processed Sapphire Substrates by Plasma Dissociation of Silane

概要

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Properties of Si films grown on (1^^-012) sapphire substrates by means of the plasma dissociation of silane depend on the substrate temperature, the applied r-f power and the ion species implanted on the surface region of sapphire substrate before the epitaxial growth. A Si film with good crystalline quality can be grown with the substrate temperature above 800℃ and a r-f power of 100 watts. Silicon ion implantation into the surface region of sapphire substrate with a dose of 5×10^<13>/cm^2 at 10 keV contributes in forming the reduction of disorder in the interfacial layer of Si film. Aluminium diffusion from the sapphire substrate to Si film is suppressed by O^+ implantation into the sapphire surface, and the electron mobility is shown to have a correlation with Al concentration in the Si film.
社団法人応用物理学会の論文
1983-04-20