Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition

概要

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Silicon films were formed on single crystal silicon substrates by partially ionized vapor deposition. Single crystal films were obtained on (III) p-type silicon substrates at room temperature when the silicon ion current density, which was about 25% of the total incident silicon atoms, exceeded 80 μA/cm^2. Anneal behaviors of epitaxial films grown at room temperature and 400℃ at an ion current density of 100 μA/cm^2 were investigated by He^+ backscattering measurements and by measurement of change in resistivity.
社団法人応用物理学会の論文
1977-04-05