Antimony Concentratuon in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-06-05
著者
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Sugiyama Tetsuya
School Of Science And Engineering Waseda University
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ITOH Tadatsugu
School of Science and Engineering, Waseda University
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NAKAMURA Tohru
School of Science and Engineering, Waseda University
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MUROMACHI Masashi
School of Science and Engineering, Waseda University
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Nakamura Tohru
School Of Science And Engineering Waseda University:(present Address)central Research Laboratory Hit
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
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Muromachi Masashi
School Of Science And Engineering Waseda University
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- Antimony Concentratuon in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
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- Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas Flow
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