Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation
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概要
- 論文の詳細を見る
The carrier depletion by boron ion implantation in sulfur doped epitaxial GaAs layers has been investigated. Diffusion coefficient of boron in GaAs is vather small and the carrier depleted region in a sulfur doped epi-layer formed by boron ion implantation remains stable after a thermal treatment at 800℃ for 20 min by the powder annealing method. The implanted boron atoms deplete carriers in the sulfur doped layer, and concentration profiles of calculated residual carriers using the empirical formula which we have proposed in this paper agree well with experimental results.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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Nomura Masahiro
School Of Science And Engineering Waseda University
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
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