Annealing Behavior of Boron and Oxygen Implanted Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-10-05
著者
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
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Shinada Kazuyoshi
School Of Science And Engineering Waseda University:toshiba Research And Development Center Tokyo Sh
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Shinada Kazuyoshi
School Of Science And Engineering Waseda University
関連論文
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- Carrier Generation in Germanium Implanted with Aluminum at Room Temperature
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- Antimony Concentratuon in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
- Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
- The Apparatus with a Microprocessor for the Photoluminescence Spectra Correction and Processing
- Silicon Epitaxy by Plasma Dissociation of Silane : C-3: CRYSTAL TECHNOLOGY
- Characteristics of Si Films Grown on Ion Processed Sapphire Substrates by Plasma Dissociation of Silane
- Damage in the Surface Region of Silicon Produced by Sputter-Etching
- Annealing Behavior of Boron and Oxygen Implanted Silicon
- Growth of GaAs by LPE on Oxygen-Implanted GaAs Substrate
- Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation
- Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas Flow
- Electrical Properties of GaAs-Films Grown by LPE on Oxygen-Implanted GaAs Substrates
- Boron Implantation into Si Using B_2O_3 and B Mixture for Ion Source Material