Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas Flow

概要

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From results of the photoluminescence studies of heavilv Si-dopced n-type GaAs, which have followed ion implantation at 70kV with Ar^+, As^+, and 0^+ antd/or annealing at 8O0℃ inhydrogen gas flow, it is confirmed that a luminescence line near 1.4 eV which has a half-width of about 80 meV at 80 K is attributed to a SiAs-VAs, complex, in which a hole is not tightly bouuad to the complex center. Arsenic vacancy could be satisfactorily reduced by arsenic-implantation if the arsenic dose and energy are appropriately chosen. In Si-doped GaAs, an oxygen atomoccupies an arsenic site if it is empty, otherwise the oxygen atom stays at an interstitial site and joins a silicon atom.
社団法人応用物理学会の論文
1977-02-05