Boron Implantation into Si Using B_2O_3 and B Mixture for Ion Source Material
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概要
- 論文の詳細を見る
B_2O_3 and B mixture for ion source material produced B_2O_2^+ and B^+ ions of large contents, which can be useful solid source material for B^+ ion implantation. Auger electron spectroscopy was employed to investigate the depth distributions of B and O which are components of mainly B_2O_2^+ and B^+ ions implanted into Si at the same energy. It is found that only B^+ ion can be doped in Si through a SiO_2 layer by means of implantation using B_2O_3 and B mixture for ion source material without mass selection.
- 社団法人応用物理学会の論文
- 1978-10-05
著者
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
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Shinada Kazuyoshi
School Of Science And Engineering Waseda University:(present Address)toshiba Research And Developmen
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Shinada Kazuyoshi
School Of Science And Engineering Waseda University
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