Carrier Compensation of n-GaAs by Oxygen Ion Implantation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1976-11-05

著者

• Takeuchi Masami

  School Of Science And Engineering Waseda University

• Takeuchi Masami

  School Of Pharmacy Hokuriku University

• ITO Tadatsugu

  School of Science and Engineering, Waseda University

• TSUCHIYA Toshiaki

  School of Science and Engineering, Waseda University

• Ito Tadatsugu

  School Of Science And Engineering Waseda University

• Tsuchiya Toshiaki

  School Of Science And Engineering Waseda University

関連論文

• Carrier Compensation of n-GaAs by Oxygen Ion Implantation
• Low-Temperature Silicon Epitaxial Growth by CO_2 Laser CVD Using SiH_4 Gas
• STABILIZATION OF BACAMPICILLIN BY THE ADDITION OF BENZALDEHYDE IN AQUEOUS SOLUTION
• The Apparatus with a Microprocessor for the Photoluminescence Spectra Correction and Processing
• Problem in Thin Film Backscattering Spectrum Edge Determination
• Growth of GaAs by LPE on Oxygen-Implanted GaAs Substrate
• Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas Flow
• Electrical Properties of GaAs-Films Grown by LPE on Oxygen-Implanted GaAs Substrates

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