Low-Temperature Silicon Epitaxial Growth by CO_2 Laser CVD Using SiH_4 Gas

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概要

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• Silicon epitaxial growth at a low substrate temperature by CO_2 laser chemical vapor deposition using SiH_4 has been investigated. Single-crystalline Si was grown at a deposition rate of 15 A/s at 650℃ under an SiH_4 pressure of 0.05 Torr and a CO_2 laser power of 6 W/cm^2 on an Si substrate. The crystalline quality of deposited Si films was examined by reflection high-energy electron diffraction, and it was found that the deposition rate depends on the incident angle and the polarization of the CO_2 laser beam. This is the first report on low-temperature Si epitaxial growth by CO_2 laser CVD.

• 社団法人応用物理学会の論文
• 1986-04-20

著者

• Tashiro Hideo

  Institute Of Physical And Chemical Research

• Meguro Takashi

  School Of Science And Engineering Waseda University

• ITO Tadatsugu

  School of Science and Engineering, Waseda University

• ISHIHARA Yukihito

  School of Science and Engineering, Waseda University

• Ishihara Yukihito

  School Of Science And Engineering Waseda University

• Ito Tadatsugu

  School Of Science And Engineering Waseda University

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