Electroluminescent Devices with Ga_2O_3 : Mn Thin-Film Emitting Layer Prepared by Sol-Gel Process
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概要
- 論文の詳細を見る
High-luminance electroluminescent devices have been newly developed using a Ga_2O_3 : Mn thin film prepared by a sol-gel process. The sol-gel process, which eliminates the need for vacuum processes, enabled the inexpensive preparation of Ga_2O_3 : Mn thin films on large-area thick ceramic sheet insulators. Gallium acethylacetonate, a relatively inexpensive and easy to handle material, was used as the Ga source material. Thin-film electroluminescent(TFEL)devices with a Ga_2O_3 : Mn thin-film emitting layer prepared by the sol-gel process at a deposition temperature of 900°C and a postannealing temperature of 1000°C exhibited luminances of 1271 and 401 cd/m^2 when driven at 1kHz and 60Hz, respectively.
- 社団法人応用物理学会の論文
- 2000-06-01
著者
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Minami T
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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MINAMI Tadatsugu
Electron Device System Laboratory, Kanazawa Institute of Technology
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MIYATA Toshihiro
Electron Device System Laboratory, Kanazawa Institute of Technology
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Shirai Tetsuya
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
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Minami T
Optoelectronic Device System R&d Center Kanazawa Institute Of Technology
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Minami Tadatsugu
Electron Device System Laboratory Kanazawa Institute Of Technology
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Miyata Toshihiro
Electron Device System Laboratory Kanazawa Institute Of Technology
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SHIRAI Tetsuya
Electron Device System Laboratory, Kanazawa Institute of Technology
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NAKATANI Toshikuni
Electron Device System Laboratory, Kanazawa Institute of Technology
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Nakatani Toshikuni
Electron Device System Laboratory Kanazawa Institute Of Technology
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