Ge/Si Heterojunction Photodiodes Fabricated by Wafer Bonding

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概要

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• Ge/Si heterojunction photodiodes with a mesa structure were fabricated by wet wafer bonding. Photocurrents were observed for lights of 1.31 and 1.55 μm wavelengths with above 40% quantum efficiencies. The measured capacitance–voltage ($C$–$V$) characteristic indicated that photoelectrons were injected into the p-Si layer through the hetero-interface when the depletion layer reached the interface. The photodiode structure having a Ge/Si heterojunction can be applied to an avalanche photodiode (APD) having a multiplication noise lower than those of conventional InGaAs/InP APDs.

• Japan Society of Applied Physicsの論文
• 2006-07-25

著者

• Kanbe Hiroshi

  Department Of Electronic And Photonic Systems Engineering Faculty Of Engineering Kochi University Of

• Miyaji Masayuki

  Department of Electronic and Photonic Systems Engineering, Faculty of Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan

• Komatsu Mikihiro

  Department of Electronic and Photonic Systems Engineering, Faculty of Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan

関連論文

• Ge/Si Heterojunction Photodiodes Fabricated by Wafer Bonding

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