20aYJ-11 Ge-S系アモルファス半導体の光学特性とギャップ内状態
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2001-09-03
著者
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吉田 起國
京大院エネルギー科学
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吉田 起國
京大原子エネルギー研
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吉田 起國
京大原研
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蜂谷 寛
京大院エネルギー科学
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関 宗俊
京大院エネルギー科学
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関 宗俊
阪大産研
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蜂谷 寛
京都大院エネ科
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Yoshida K
Nagoya Univ. Nagoya Jpn
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Yamada K
Department Of Physics Tohoku University
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Yamada Kazuyoshi
Institute Of Material Research Tohoku University
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吉田 起國
Graduate School Of Engineering Osaka University
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Kishi Yasuo
Functional Materials Research Center Sanyo Electric Co. Ltd.
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