Direct Evidence for Asymmetric Dimer on Si(100) at Low Temperature by Means of High-Resolution Si 2p Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-01
著者
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Mukai K
Univ. Tokyo Chiba Jpn
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YAMASHITA Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo
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MUKAI Kozo
The Institute for Solid State Physics, The University of Tokyo
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YOSHINOBU Jun
The Institute for Solid State Physics, The University of Tokyo
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Mukai Kozo
The Institute For Solid State Physics The University Of Tokyo
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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MACHIDA Shin-ichi
The Institute for Solid State Physics, The University of Tokyo
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NAGAO Masashi
The Institute for Solid State Physics, The University of Tokyo
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YAMAMOTO Susumu
The Institute for Solid State Physics, The University of Tokyo
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KAKEFUDA Youhei
The Institute for Solid State Physics, The University of Tokyo
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Nagao Masashi
The Institute For Solid State Physics The University Of Tokyo
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Kakefuda Youhei
The Institute For Solid State Physics The University Of Tokyo
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Machida Shin-ichi
The Institute For Solid State Physics The University Of Tokyo
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Yamamoto Susumu
The Institute For Solid State Physics The University Of Tokyo
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- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
- Direct Evidence for Asymmetric Dimer on Si(100) at Low Temperature by Means of High-Resolution Si 2p Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
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