Electron Transport Properties and Dielectric Breakdown of Alkyl Monolayers Chemisorbed on a Highly Doped n-Type Si(111) Surface
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概要
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We investigated electron transport characteristics through Hg/alkyl monolayer/Si(111) junctions in a wide bias voltage range, where a highly doped n-type Si(111) wafer was used. The longer the alkyl chain length becomes, the less current flows at both negative and positive bias. We found the thermionic emission current was small and the tunneling process was dominant in all bias. We observed a sudden increase at the sample bias near $-1.0$ V in all of the first derivatives of current–voltage characteristics. Because these voltages do not depend on the alkyl chain length, we assign these phenomena to the emerging of valence-band density of states of the Si substrate. Moreover, dielectric breakdowns were observed below $-2.0$ V for all of the monolayers (nearly constant breakdown voltage irrespective of the alkyl chain length). However, no breakdown was observed in the positive bias between 2.0 and 3.0 V. We discuss the breakdown mechanism, including the field-induced shift of unoccupied molecular orbital levels ($\sigma^{*}_{\text{CH}}$), which was confirmed by first-principles calculations. A transient negative ion state of alkyl groups may play an important role in bond breaking.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-05-25
著者
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YAMASHITA Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo
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Mukai Kozo
The Institute For Solid State Physics The University Of Tokyo
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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Akagi Kazuto
Department Of Physics University Of Tokyo
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Tsuneyuki Shinji
Department Of Physics University Of Tokyo
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Furuhashi Masayuki
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Omura Ayako
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Tsuneyuki Shinji
Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
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Akagi Kazuto
Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
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