Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
スポンサーリンク
概要
- 論文の詳細を見る
The atom-specific electronic structure at the oxynitride/Si interface was investigated by soft X-ray absorption and emission spectroscopy in order to elucidate the relationship of the incorporation effect of nitrogen atoms at the interface with the performance of metal–oxide–silicon devices. At the interface, the conduction band minimum (CBM) decreases when the concentration of N atoms at the interface increases. For valence states, the width of the nonbonding states of N atoms increases when the concentration of N atoms is high, indicating that an inhomogeneous interface is formed. Thus, the excessive incorporation of nitrogen atoms at the SiO2/Si(100) interface decreases CBM and induces the formation of a more inhomogeneous interface, which decreases carrier mobility in the channel region.
- Japan Society of Applied Physicsの論文
- 2007-01-25
著者
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TOKUSHIMA Takashi
RIKEN/SPring-8
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Shin Shik
The Institute For Solid State Physics The University Of Tokyo
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YAMASHITA Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo
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HATTORI Takeo
Research Center for Silicon Nano-Science, Musashi Institute of Technology
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Mukai Kozo
The Institute For Solid State Physics The University Of Tokyo
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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Nohira Hiroshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Oguchi Kazuhiro
The Institute For Solid State Physics The University Of Tokyo
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Tamura Naoyoshi
Advanced Process Development Department C2-project Div. Fujitsu Laboratories Ltd.
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Harada Yoshihisa
Riken
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Shin Shik
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Hattori Takeo
Research Center for Silicon Nano-Science, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-0082, Japan
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Nohira Hiroshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-8557, Japan
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Tokushima Takashi
Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
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Harada Yoshihisa
Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
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Yamashita Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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