Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO_2 Layer
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-05-25
著者
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MATSUSHITA Tomohiro
Japan Synchrotron Radiation Research Institute
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NOHIRA Hiroshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Nohira Hiroshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Kobata Masaaki
National Institute For Materials Science (nims)
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Nohira Hiroshi
Department Of Electrical And Electronic Engineering Tokyo City University
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PIS Igor
Charles University, Faculty of Mathematics and Physics, Department of Surface and Plasma Science
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KOBATA Masaaki
Beamline Station at SPring-8, National Institute for Materials Science (NIMS)
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KOBAYASHI Keisuke
Beamline Station at SPring-8, National Institute for Materials Science (NIMS)
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Pis Igor
National Institute For Materials Science (nims)
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Matsushita Tomohiro
Japan Synchrotron Radiation Research Institute (jasri) Spring-8
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Kobayashi Keisuke
National Institute For Materials Science (nims)
関連論文
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- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- Development of the Hard-X-ray Angle Resolved X-ray Photoemission Spectrometer for Laboratory Use
- Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO_2 Layer
- Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface
- Stereo-microscopy of atomic arrangements on thin films using circular dichroism in x-ray photoelectron angular distribution (Invited Peview Paper)
- Effect of Preoxide on the Structure of Thernmal Oxide
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- Photoelectron Diffraction and Holographic Reconstruction of Graphite
- Negative Photoelectron Diffraction Replica in Secondary Electron Angular Distribution
- Dynamics of Magnetostatically Coupled Vortices Observed by Time-Resolved Photoemission Electron Microscopy
- Complete Assignment of Spin Domains in Antiferromagnetic NiO(100) by Photoemission Electron Microscopy and Cluster Model Calculation
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Characterizing Edge and Stacking Structures of Exfoliated Graphene by Photoelectron Diffraction
- Characterizing Edge and Stacking Structures of Exfoliated Graphene by Photoelectron Diffraction (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
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