Tamura Naoyoshi | Advanced Process Development Department C2-project Div. Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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TOKUSHIMA Takashi
RIKEN/SPring-8
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Shin Shik
The Institute For Solid State Physics The University Of Tokyo
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YAMASHITA Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo
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HATTORI Takeo
Research Center for Silicon Nano-Science, Musashi Institute of Technology
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Tamura Naoyoshi
Advanced Process Development Department C2-project Div. Fujitsu Laboratories Ltd.
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原田 慈久
東大院工:東大放射光機構:理研:spring-8
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HARADA Yoshihisa
RIKEN/SPring-8
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Mukai K
Univ. Tokyo Chiba Jpn
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Shin S
Riken/spring-8
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OGUCHI Kazuhiro
The Institute for Solid State Physics, The University of Tokyo
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MUKAI Kozo
The Institute for Solid State Physics, The University of Tokyo
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YOSHINOBU Jun
The Institute for Solid State Physics, The University of Tokyo
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TAMURA Naoyoshi
Advanced Process Development Department, C2-Project Div., Fujitsu Laboratories Ltd.
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NOHIRA Hiroshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Mukai Kozo
The Institute For Solid State Physics The University Of Tokyo
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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Nohira Hiroshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Oguchi Kazuhiro
The Institute For Solid State Physics The University Of Tokyo
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Shin S
The Institute For Solid State Physics The University Of Tokyo
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Harada Yoshihisa
Riken
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Shin Shik
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Hattori Takeo
Research Center for Silicon Nano-Science, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-0082, Japan
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Nohira Hiroshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-8557, Japan
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Tokushima Takashi
Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
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Harada Yoshihisa
Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
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Yamashita Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
著作論文
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface