Yoshinobu Jun | The Institute For Solid State Physics The University Of Tokyo
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概要
関連著者
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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YAMASHITA Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo
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Mukai Kozo
The Institute For Solid State Physics The University Of Tokyo
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YOSHINOBU Jun
The Institute for Solid State Physics, The University of Tokyo
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Kawai Maki
The Institute Of Physical And Chemical Research
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Furuhashi Masayuki
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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TOKUSHIMA Takashi
RIKEN/SPring-8
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TANAKA Hiroyuki
The Institute of Scientific and Industrial Research, Osaka University
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Mukai K
Univ. Tokyo Chiba Jpn
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Kawai Maki
The Institute of Physical and Chemical Research (RIKEN)
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Shin Shik
The Institute For Solid State Physics The University Of Tokyo
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MUKAI Kozo
The Institute for Solid State Physics, The University of Tokyo
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HATTORI Takeo
Research Center for Silicon Nano-Science, Musashi Institute of Technology
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Yoshinobu J
Inst. Physical And Chemical Res.(riken) Saitama Jpn
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Yoshinobu Jun
The Institute Of Physical And Chemical Research (riken)
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Nohira Hiroshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Oguchi Kazuhiro
The Institute For Solid State Physics The University Of Tokyo
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Tamura Naoyoshi
Advanced Process Development Department C2-project Div. Fujitsu Laboratories Ltd.
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Kawai Tomoji
The Institute Of Science And Industrial Research (isir-sanken) Osaka University
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Harada Yoshihisa
Riken
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Tanaka Shin-ichiro
Institute For Molecular Science:the Graduate University For Advanced Studies
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Tanaka Shin-ichiro
Institute For Molecular Science
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MACHIDA Shin-ichi
The Institute for Solid State Physics, The University of Tokyo
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NAGAO Masashi
The Institute for Solid State Physics, The University of Tokyo
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YAMAMOTO Susumu
The Institute for Solid State Physics, The University of Tokyo
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KAKEFUDA Youhei
The Institute for Solid State Physics, The University of Tokyo
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NISHIJIMA Mitsuaki
Department of Chemistry, Faculty of Science, Kyoto University
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Nagao Masashi
The Institute For Solid State Physics The University Of Tokyo
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Kakefuda Youhei
The Institute For Solid State Physics The University Of Tokyo
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Machida Shin-ichi
The Institute For Solid State Physics The University Of Tokyo
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Akagi Kazuto
Department Of Physics University Of Tokyo
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Tsuneyuki Shinji
Department Of Physics University Of Tokyo
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Nishijima M
Department Of Chemistry Graduate School Of Science Kyoto University
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Nishijima Mitsuaki
Department Of Chemistry Graduate School Of Science Kyoto University
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Tanaka Hiroyuki
The Institute Of Science And Industrial Research (isir-sanken) Osaka University:jst Presto
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Yamamoto Susumu
The Institute For Solid State Physics The University Of Tokyo
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Shin Shik
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Furuhashi Masayuki
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Hattori Takeo
Research Center for Silicon Nano-Science, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-0082, Japan
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Omura Ayako
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Mukai Kozo
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Umeyama Hirobumi
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Katayama Tetsuo
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Nohira Hiroshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Setagaya-ku, Tokyo 158-8557, Japan
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Tokushima Takashi
Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
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Harada Yoshihisa
Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan
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Yoshinobu Jun
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Yoshinobu Jun
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Tsuneyuki Shinji
Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
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Akagi Kazuto
Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
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Yamashita Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Yamashita Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
著作論文
- Direct Evidence for Asymmetric Dimer on Si(100) at Low Temperature by Means of High-Resolution Si 2p Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
- Elementary Chemical-Reaction Processes on Silicon Surfaces
- Adsorption and Dimer Formation of Nitrogen Monoxide on Pt(111) at Low Temperature
- Imaging of Nucleic Acid Base Molecules on Pd(110) Surfaces by Scanning Tunneling Microscopy
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Electron Transport Properties and Dielectric Breakdown of Alkyl Monolayers Chemisorbed on a Highly Doped n-Type Si(111) Surface
- Low-Temperature Surface Photochemistry of $\pi$-bonded Ethylene on Si(100)$c$($4{\times}2$)
- Molecular Orientation of the Decyl Monolayer Chemically Bonded to Si(111) Determined by Angle-Dependent Transmission Infrared Spectroscopy