Low-Temperature Surface Photochemistry of $\pi$-bonded Ethylene on Si(100)$c$($4{\times}2$)
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概要
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We investigated the surface photochemistry of the $\pi$-complex type weakly adsorbed ethylene on Si(100)$c$($4{\times}2$) at 50 K, using high-resolution electron energy loss spectroscopy, quadrupole mass spectrometry, and photoelectron spectroscopy. At 50 K, both $\pi$-complex precursor and di-$\sigma$ species coexist. We found that both the photoreaction from the $\pi$-complex precursor to the di-$\sigma$ chemisorption and the photodesorption of ethylene occur upon photoirradiation. From the photodesorption signal of ethylene, we estimated the total cross section including these two photoinduced processes to be $1.1 \times 10^{-17}$ cm2 at 365 nm. From the electronic structure of the adsorption system obtained in this study, we propose that a temporary negative ion of $\pi$-bonded ethylene formed by a photogenerated hot-electron from the Si substrate is related to these processes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-08-25
著者
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YAMASHITA Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo
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Mukai Kozo
The Institute For Solid State Physics The University Of Tokyo
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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Mukai Kozo
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Umeyama Hirobumi
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Katayama Tetsuo
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Yoshinobu Jun
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Yamashita Yoshiyuki
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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