Elementary Chemical-Reaction Processes on Silicon Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-03-15
著者
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YOSHINOBU Jun
The Institute for Solid State Physics, The University of Tokyo
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Yoshinobu J
Inst. Physical And Chemical Res.(riken) Saitama Jpn
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Yoshinobu Jun
The Institute For Solid State Physics The University Of Tokyo
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Tanaka Shin-ichiro
Institute For Molecular Science:the Graduate University For Advanced Studies
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Tanaka Shin-ichiro
Institute For Molecular Science
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NISHIJIMA Mitsuaki
Department of Chemistry, Faculty of Science, Kyoto University
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Nishijima M
Department Of Chemistry Graduate School Of Science Kyoto University
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Nishijima Mitsuaki
Department Of Chemistry Graduate School Of Science Kyoto University
関連論文
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Direct Evidence for Asymmetric Dimer on Si(100) at Low Temperature by Means of High-Resolution Si 2p Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
- Hall Effect Measurements of Surface Conductive Layer on Undoped Diamond Films in NO_2 and NH_3 Atmospheres
- Possibility of Realizing a Gas Sensor Using Surface Conductive Layer on Diamond Films
- Experimental Evalution of Phase Contrast Lithography
- Charging Effect of Ion Implantation on Glass
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Elementary Chemical-Reaction Processes on Silicon Surfaces
- Nonlinear Growth of Periodic Ripple Structures with Different Spatial Periods in Laser Etching of GaAs : Etching
- Selective Etching of AI_2O_3 on GaAs using Excimer Lasers : Etching
- Nonlinear Growth of Periodic Ripple Structures with Different Spatial Periods in Laser Etching of GaAs
- Selective Etching of Al_2O_3 on GaAs using Excimer Lasers
- Smoothing of Silica Glass Surfaces by Ion Implantation
- Magneto-Optical Recording Characteristics of TbFeCo Media by Magnetic Field Modulation Method
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Unstable Phase-Conjugate Resonator
- Dynamic Recording and Readout Charaeteristics of GdTbFe Using a Modified Magneto-Optical Disk Exerciser
- Synthesis of ZnO Bicrystals Doped with Co or Mn and Their Electrical Properties
- A Metastable Precursor in the Oxidation of Si(111)-(7 × 7)
- Diels-Alder Reaction on the Clean Diamond (100) 2×1 Surface
- Surface Phonons, Electronic Structure and Chemical Reactivity of Diamond (100)(2×1) Surface
- Construction of a Compact Spin- and Angle-Resolved Photoelectron Spectrometer
- Dispersion-Compensation Electron-Energy-Loss Spectrometer
- Adsorption and Dimer Formation of Nitrogen Monoxide on Pt(111) at Low Temperature
- Investigation on the Surface Electronic States of the Si(001) c(4×2) and c(8×8) Surface : An Electron Energy Loss Spectroscopy Study
- Imaging of Nucleic Acid Base Molecules on Pd(110) Surfaces by Scanning Tunneling Microscopy
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Electron Transport Properties and Dielectric Breakdown of Alkyl Monolayers Chemisorbed on a Highly Doped n-Type Si(111) Surface
- Low-Temperature Surface Photochemistry of $\pi$-bonded Ethylene on Si(100)$c$($4{\times}2$)
- Molecular Orientation of the Decyl Monolayer Chemically Bonded to Si(111) Determined by Angle-Dependent Transmission Infrared Spectroscopy