Fine Tuning of Metal-Insulator Transition in Al_<0.3>Ga_<0.7>As Using Persistent Photoconductivity
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概要
- 論文の詳細を見る
We report experiments on the electrical conductivity of A1..,Ga...As:Si in thecritical region of the metal-insulator transition. The electron concentration is finelycontrolled in the vicinity of the transition using the persistent photoconductivityeffect. The value of the critical exponent turns out to be 1. The metal-insulator transilion due to the delocalization effect by the magne1.ic field is also studied.
- 社団法人日本物理学会の論文
- 1987-07-15
著者
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Sano N
Department Of Physics Faculty Of Science Kwansei-gakuin University
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Sano Naokatsu
Faculty Of Engineering Science Osaka University
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Sano Naokatsu
Department Of Physics School Of Science Kwansei Gakuin University
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Kobayashi S
Non Destructive Evaluation And Science Research Center Faculty Of Engineering Iwate University
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Katsumoto Shingo
Department of Physics, Faculty of Science, University of Tokyo
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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Komori Fumio
Departmentof Physics,Facuity of Science,University of Tokyo
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Sano Naokatsu
Department Of Physics School Of Science
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Sano Naokatsu
Department Of Physics Faculty Of Science Kwansei Gakuin University
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Komori Fumio
Institute for Solid State Physics, University of Tokyo
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Katsumoto Shingo
Department Of Physics Faculty Of Science University Of Tokyo
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Komori F
Institute For Solid State Physics University Of Tokyo:crest Japan Science And Technology Cooperation
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Komori Fumio
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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KOMORI Fumio
Department of Physics, University of Tokyo
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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