Dielectric Constant Measuremeny near the Metal-Insulator Transition in Al_<0.3>Ga_<0.7>As
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概要
- 論文の詳細を見る
The dielectric constant of A1..,Ga..,As:Si was measured near the metal-insulatortransition (MITT. The effective electron concentration of the system was adjusted byusing persistent photoconductivity. The temperature dependence of the dielectric con-slant is qualitatively explained by the Efros-Shikrovskii model of disordered in-sulators. The best fitted value of the MIT critical exponent is close to 2.
- 社団法人日本物理学会の論文
- 1989-03-15
著者
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Sano N
Department Of Physics Faculty Of Science Kwansei-gakuin University
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Sano Naokatsu
Faculty Of Engineering Science Osaka University
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Sano Naokatsu
Department Of Physics School Of Science Kwansei Gakuin University
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Kobayashi S
Non Destructive Evaluation And Science Research Center Faculty Of Engineering Iwate University
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Katsumoto Shingo
Department of Physics, Faculty of Science, University of Tokyo
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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Komori Fumio
Departmentof Physics,Facuity of Science,University of Tokyo
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Sano Naokatsu
Department Of Physics School Of Science
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Sano Naokatsu
Department Of Physics Faculty Of Science Kwansei Gakuin University
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SAITO Kazuhiro
Tochigi Research Laboratories of Kao Corporation
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Komori Fumio
Institute for Solid State Physics, University of Tokyo
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Katsumoto Shingo
Department Of Physics Faculty Of Science University Of Tokyo
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Komori F
Institute For Solid State Physics University Of Tokyo:crest Japan Science And Technology Cooperation
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Komori Fumio
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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KOMORI Fumio
Department of Physics, University of Tokyo
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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