Inelastic Scattering Time and Metal-Insulator Transition in Thick Disordered Bismuth Films
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概要
- 論文の詳細を見る
The inelastic scattering time of electrons and the metal-insulator transition arestudied in disordered thick bismuth films. In weakly disordered films, the anti-localization effect is observed, and dimensional crossover of the inelastic scattering be-tween two and three is demonstrated by changing the thickness of the films. Thecritical exponent of the metal-insulator transition in this system which represents adisordered metal with strong spin-orbit interaction is examined and fixed to be unity.This indicates that the transition is governed by the electron-electron interaction.
- 社団法人日本物理学会の論文
- 1987-02-15
著者
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OKUMA Satoshi
Department of Physics, Tokyo Metropolitan University
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Kobayashi S
Non Destructive Evaluation And Science Research Center Faculty Of Engineering Iwate University
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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Komori Fumio
Departmentof Physics,Facuity of Science,University of Tokyo
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Okuma Satoshi
Department Of Physics Faculty Of Science University Of Tokyo
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Okuma Satoshi
Department Of Physics Faculty Of Science Tokyo Institute Of Technology
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Komori Fumio
Institute for Solid State Physics, University of Tokyo
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Komori F
Institute For Solid State Physics University Of Tokyo:crest Japan Science And Technology Cooperation
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Komori Fumio
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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Okuma S
Research Center For Low Temperature Physics Tokyo Institute Of Technology
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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KOMORI Fumio
Department of Physics, University of Tokyo
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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