NMR Study on Heavily Doped Silicon. I
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概要
- 論文の詳細を見る
NMR line shape, Knight shift and relaxation time are measured on ^<29>Si and ^<31>P in silicon with phosphorus concentrations ranging from 3.4×10^<17>cm^<-3> to 9.6×10^<19>cm^<-3> over a temperature region from 0.4 to 4.2 K. The behaviors of these absorption lines are shown to correspond to the three types of impurity conduction. These behaviors are discussed in connection with the metal-nonmetal transition and random nature of the system. The result in metallic samples is interpreted in terms of the electron gas with correlation.
- 社団法人日本物理学会の論文
- 1974-05-15
著者
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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SASAKI Wataru
Department of Electrical Engineering, University of Miyazaki
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IKEHATA Seiichiro
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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Sasaki Wataru
Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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Sasaki Wataru
Department Of Cardiology Akita Kumiai Hospital
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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KOBAYASHI Shun-ichi
Faculty of Engineering Science, Osaka University:(Present address)Department of Physics, University of Tokyo
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KOBAYASHI Shun-ichi
Department of Physics, Osaka University
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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Sasaki Wataru
Department of Physics,Faculty of Science University of Tokyo
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