Scattering of Electrons in Heavily Doped Semiconductors

概要

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An analysis is ntade for systentatic change of the low temperatture resistivityverstus tentperature curves with the change of donor concentration fot?nd inheavily Sb-doped gex=naanium. The observed results are consistently accountedfor in terms of the assuntption that the donor electrons are degenerate in a rigidband with tlve sante strtxctture as the pure crystal, and of a specific assunxptionfor the energy dependence of the coulomb scattering which deviates distinctlyfrom the ustxal one at low energies where the electron wavelength is greater thanthe average innpurity distance. The asst?mptions are shown to be consistent withobserved tennperatture dependence.of the H'all effect. The resistivity vs tempera-lure curves for single valley, including the case induced by app]ying tzniaxjal stress,and other nttmltivalley semicondtmctors are interpreted on the same basis.
社団法人日本物理学会の論文
1977-05-15