NMR Study on Heavily Doped Silicon. II
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概要
- 論文の詳細を見る
Spin echo spectra, Knight shift and spin-lattice relaxation time are measured on ^<31>P in silicon crystals with phosphorus concentrations ranging from 4.5×10^<18>cm^<-3> to 9.6×10^<19>cm^<-3> over a temperature region from 4.2 K to 0.4 K. The shift and width of ^<31>P line is atrributed to the inhomogeneous electron contact field. The results together with those of ^<29>Si (J. Phys. Soc. Japan 36 (1974) 1377) support the Mott transition mechanism of metal-non metal transition and allow to interpret various properties of the metallic samples in terms of an electron gas with correlation.
- 社団法人日本物理学会の論文
- 1975-12-15
著者
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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SASAKI Wataru
Department of Electrical Engineering, University of Miyazaki
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IKEHATA Seiichiro
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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Sasaki Wataru
Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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Sasaki Wataru
Department Of Cardiology Akita Kumiai Hospital
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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KOBAYASHI Shun-ichi
Faculty of Engineering Science, Osaka University:(Present address)Department of Physics, University of Tokyo
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KOBAYASHI Shun-ichi
Department of Physics, Osaka University
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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Sasaki Wataru
Department of Physics,Faculty of Science University of Tokyo
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