NMR Study on Compensated Si:P
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概要
- 論文の詳細を見る
We investigated the effect of compensation on the electronic properties of heavily phosphorus doped silicon. A sample just in the metallic region was compensated by irradiation with fast neutrons to the intermediate region. A detailed study of ^29Si NMR (Knight shift, spin-lattice relaxation time T_1) was carried out together with a measurement of the static magnetic susceptibility. We obtained the result that in our compensated samples the Knight shift becomes larger than in the uncompensated case. Coupled with results of T_1 and magnetic susceptibility we conclude that as a result of compensation the donor wave function extends spatially. The NMR measurements were made in the temperature region of 0.5-0.04 K.
- 社団法人日本物理学会の論文
- 1993-09-15
著者
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Mori Takao
Department Of Cardiology Miki City Hospital
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SHIMAZU Yoshihiro
Department of Physics, Yokohama National University
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Shimazu Yoshihiro
Department Of Physics Faculty Of Engineering Yokohama National University
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Shimazu Yoshihiro
Department Of Physics Faculty Of Science University Of Tokyo
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IKEHATA Seiichiro
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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Ikehata Seiichiro
Department Of Physics Faculty Of Science University Of Tokyo
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Mori Takao
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Mori Takao
Department Of Physics Faculty Of Science University Of Tokyo
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IKEHATA Seiichiro
Department of Physics, Faculty of Science, University of Tokyo
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