NMR Study on Electronic States in Phosphorus Doped Silicon
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概要
- 論文の詳細を見る
Detailed study of NMR line shape and spin-lattice relaxation time has beencarried ottt on phosphorus doped silicon with a purpose of making clear thenature of the electronic state in samples which show intermediate or metallicimpurity conduction. On the basis of these observations previously publishedpictures for metallic transition were reexamined. A picture that the Andersonlocalized states with "intra" state correlation exist over a wide range of donorconcentration, inclttding the critical concentration of metallic transition, is shownto explain the observed properties in a consistent w'ay.
- 社団法人日本物理学会の論文
- 1978-10-15
著者
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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Sasaki W
Department Of Physics Toho University
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SASAKI Wataru
Department of Electrical Engineering, University of Miyazaki
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IKEHATA Seiichiro
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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Sasaki Wataru
Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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FUKAGAWA Yoichi
Department of Physics,Faculty of Science,University of Tokyo
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Sasaki Wataru
Department Of Cardiology Akita Kumiai Hospital
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Fukagawa Yoichi
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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KOBAYASHI Shun-ichi
Faculty of Engineering Science, Osaka University:(Present address)Department of Physics, University of Tokyo
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KOBAYASHI Shun-ichi
Department of Physics, Osaka University
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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Sasaki Wataru
Department of Physics,Faculty of Science University of Tokyo
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