The Anti-Localization Effect in Bi Thin Films
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概要
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Temperature and magnetic field dependence of conductivity in Bi thin films ismeasured and compared with theories of the localization and the Coulomb in-teraction between electrons. The anti-localization effect in the case of strongspin-orbit interaction -logarithmic increase of conductivity with decreasingtemperature -is found together with the other In T term due to the interactioneffect. From the analysis of the magnetic field dependence the inelastic scatteringtime is determined to vary as T ' below 1.5 K and as T ' above 4 K beingconsistent with the temperature dependence of conductivity.
- 社団法人日本物理学会の論文
- 1983-02-15
著者
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Komori Fumio
Department Of Physics Faculty Of Science University Of Tokyo
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Sasaki Wataru
Department Of Electrical And Electronic Engineering And Photon Science Center University Of Miyazaki
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KOBAYACHI Shun-ichi
Department of Physics Faculty of Science,University of Tokyo
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Sasaki Wataru
Department Of Cardiology Akita Kumiai Hospital
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Kobayachi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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SASAKI Wataru
Department of Physics Faculty of Science,University of Tokyo
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KOMORI Fumio
Department of Physics Faculty of Science,University of Tokyo
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