Electric Conduction in Heavily Doped Germanium (Selected Topics in Semiconductor Physics<特集>) -- (Transport)

概要

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Experimental results of the temperature dependence of resistivity in n-type germanium doped with antimony at concentrations ranging from 2×10^<17> to 3×10^<18> cm^<-3> are described. Two characteristic features are pointed out: i) ρ versus T curve has a maximum at 0.6 T_F, T_F being the Fermi temperature calculated assuming a rigid conduction band. Around this maximum, the curves for various samples are reduced into a single curve by scaling ρ and T with these values at the maxima. ii) Over lowest temperature region ρ versus T curve shows anomalous variation. This variation claims the existence of anomaly in the scattering relaxation time of the electrons around the Fermi surface at these temperatures.
理論物理学刊行会の論文
1975-11-29