Effect of Self-Capacitance on Charge Kosterlitz-Thouless Transition in Small Tunnel-Junction Arrays
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概要
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We have studied the self-capacitance dependence of zero-bias resistance in two-dimensional arrays of highly resistive small tunnel junctions. Deviation from the square-root-cusp behavior is more prominent in arrays with smaller screening length. The results suggest that the finiteness of the screening length is responsible for disappearance of the charge Kosterlitz-Thouless (KT) transition in these arrays.
- 社団法人日本物理学会の論文
- 1995-09-15
著者
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Kanda Akinobu
Department Of Physics School Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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Kobayashi Shun-ichi
Department Of Physics School Of Science University Of Tokyo
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Kobayashi Shunichi
Department Of Physics Graduate School Of Science The University Of Tokyo
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Kobayashi Shun-ichi
Department Of Pediatrics Institute Of Health Bioscience The University Of Tokushima Graduate School
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Kobayashi Shunichi
Department of Physics, Faculty of Science, University of Tokyo
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Kobayashi Shun-ichi
Department of Functional Machinery and Mechanics, Shinshu University
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Kobayashi Shun-ichi
Department of Physics,Graduate School of Science,The University of Tokyo
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