On Gunn Instability in Two-Dimensional Semiconductors
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概要
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The instability associated with negative differential conductivity in two-dimensional (2-D) semiconductors such as inversion layers of MOSFET isdiscussed. The space-charge accumulation exhibits considerably different featuresfrom those in bulk materials, because of the different A-dependence of the growthrate of space-charge Fourier components ; the growth rate is proportional to kin 2-D, while it is independent of k in 3-D. It is deduced that the layer mustfinally be covered with space-charge waves, e.g., of A:10' -10' cm " in then-inversion layer of Si.
- 社団法人日本物理学会の論文
- 1978-08-15
著者
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Kurosawa T
Chuo Univ. Tokyo
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Kurosawa Tatsumi
Department Of Physics Chuo University
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Nagahashi Seiji
Department Of Physics Chuo University
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