Advanced Input/Output Technology Using Laterally Modulated Channel Metal–Oxide–Semiconductor Field Effect Transistor for 65-nm Node System on a Chip
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概要
- 論文の詳細を見る
Advanced input/output (I/O) technology is reported for leading-edge system on a chip (SoC) applications, including high-speed I/O and RF circuits. Our device having a laterally modulated channel shows sufficient reliability even at 3.3 V operation with the same size as a conventional 2.5 V device. Since this technology also improves current drivability, the layout area of an I/O circuit block can be reduced down to 55% because of a reduced total gate width. Moreover, a metal-on-gate (MOG) option has been developed for RF applications, and an $ f_{\text{max}}$ of 55 GHz was achieved.
- 2006-04-30
著者
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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Satoh Shigeo
Fujitsu Laboratories Ltd.
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KOJIMA Manabu
Fujitsu Laboratories Ltd.
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MOMIYAMA Youichi
Fujitsu Laboratories Ltd.
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Sugii Toshihiro
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Yoshida Eiji
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Hasegawa Nobumasa
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Momiyama Youichi
Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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