High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage (Special Issue on Ultra-High-Speed IC and LSI Technology)
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概要
- 論文の詳細を見る
Dynamic Threshold-Voltage MOSFETs (DTMOS) in which the body is connected to the gate provide extremely high transconductance for supply voltages as low as under 0.7V. This is because the forward body-source bias lowers the threshold voltage, which results in large gate drive and large drain current. This paper describes the high frequency characteristics of DTMOS for the first time. The DTMOS we analyzed has a small parasitic resistance due to employing optimized Co salicide technology. It also has a small parasitic capacitance due to a reduction in the overlapping region between the gate and drain, which is achieved by employing gate poly-Si oxidation prior to LDD implantation. We obtained an F_t of 78 GHz and an F_<max> of 37 GHz for a 0.1-μm-L_<eff> DTMOS even at a supply voltage of 0.7V. We also observed an F_<max> enhancement by 1.5 times for a 0.12-μm-L_<eff> DTMOS compared to a conventional SOI MOS-FET, which we attributed to high transconductance and large output resistance. The DTMOS can be considered as the most promising device for low-power RF LSIs.
- 社団法人電子情報通信学会の論文
- 1999-03-25
著者
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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TANAKA Tetsu
Fujitsu Laboratories Ltd.
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MOMIYAMA Youichi
Fujitsu Laboratories Ltd.
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