Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
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概要
- 論文の詳細を見る
Electroluminescent p-n junctions were prepared by zinc diffusion into n-GaP crystals doped with tellurium, but not intentionally doped with oxygen. Annealing at 800℃ after diffusion at 1000℃ improved red emission efficiency of diodes about one hundred times and green emission efficiency seven times. For annealed diodes, red efficiency monotonically decreased with diffusion time, whereas green efficiency showed a maximum between 2 and 4 hours, about four times the value for one hour diffusion. Green efficiencies obtained under optimum conditions are of the order of 10^<-5> at 10A/cm^2 and increases with current up to 1×10^<-4> for 100A/cm^2. Annealing-time and diffusion-time dependences of green and red emissions were well interpreted on the basis of junction profiles revealed from capacitance data. At 77°K, junctions showed characteristics of p-i-n structure; abrupt changes in emission spectra were observed around currents inducing negative resistance, according to a change in injection mechanism.
- 社団法人応用物理学会の論文
- 1970-05-05
著者
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TOYAMA Masaharu
Toshiba Research and Development Center
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Maeda Keiji
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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SEKIWA Tetsuo
Toshiba Research and Development Center, Toshiba Corp.
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Sekiwa Tetsuo
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Toyama Masaharu
Toshiba Central Research Laboratory
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MAEDA Keiji
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
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Toyama Masaharu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
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