Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-12-05
著者
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Naito Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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KASAMI Akinobu
Toshiba Research and Development Center, Toshiba Corporation
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TOYAMA Masaharu
Toshiba Research and Development Center
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Maeda Keiji
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Kasami Akinobu
Toshiba Central Research Laboratory
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Toyama Masaharu
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Toyama Masaharu
Toshiba Central Research Laboratory
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TOYAMA Masaharu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co. Ltd.
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