Kinetics of Zn-O Complex Formation in GaP Crystal
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概要
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Heat treatment effect on red photoluminescence efficiency in p-GaP;Zn,O crystals is investigated and a strong N_A (Zn acceptor concentration) dependence of formation rate of Zn-O complex is revealed. The results are quantitatively interpreted in terms of a reaction mechanism in which a substitutional zinc atom on the Ga site jumps into an interstitial site, diffuses in lattice, and is captured in a Ga vacancy neighboring the oxygen atom on the P site. Zn-O complex concentration is expressed by an exponential function of annealing time. Variation rate of the complex concentration is proportional to N_A^2 at low temperatures where dissociation constant K of Zn-O complex is smaller than N_2, while it is proportional to N_A at high temperatures where K is larger than N_A. Dissociation constant and dissociation rate constant of Zn-O complex were determined as functions of temperature. 0.74 eV was obtained for dissociation activation energy.
- 社団法人応用物理学会の論文
- 1972-06-05
著者
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KASAMI Akinobu
Toshiba Research and Development Center, Toshiba Corporation
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TOYAMA Masaharu
Toshiba Research and Development Center
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Kasami Akinobu
Toshiba Central Research Laboratory
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Toyama Masaharu
Toshiba Central Research Laboratory
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